ISO Group Logo
Defense and Aerospace
Supply Chain Partner
A Dynatech International Company


NSN 5961-00-021-9057, 5961000219057
SEMICONDUCTOR DEVICES,UNITIZED

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000219057
Codification Country
United States
Item Name Code
INC 61962
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Request Qualified Suppliers: Currently qualifying suppliers

Manufacture or supply this part?
Join our growing community of certified suppliers.

Let Us Know
  CALL ABOUT NSN 5961-00-021-9057
Our client representatives are standing by to help fulfill your request.

+1-321-773-5710

  REQUEST QUOTE for 5961-00-021-9057


Have a list that needs to be quoted? Upload it here.

DLMS® Summary

National Stock Number 5961-00-021-9057

National Stock Number (NSN) 5961-00-021-9057, or NIIN 000219057, (semiconductor devices,unitized) was assigned May 10, 1968 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 7 manufacturer part numbers associated with this NSN. 4 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 6 suppliers. Today, 5 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 3 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 61962. [TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES:DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES:NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000219057 contains gold.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MICROAMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
COMPONENT NAME AND QUANTITY
(ASKA) 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL
(ABBH) METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-5
OVERALL DIAMETER
(ADAV) 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
PRECIOUS MATERIAL
(PRMT) GOLD
PRECIOUS MATERIAL AND LOCATION
(PMLC) TERMINAL SURFACES GOLD
SPECIAL FEATURES
(FEAT) ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 6 UNINSULATED WIRE LEAD

Manufacturer Part Numbers

C532000361

RNCC
3
RNVC
2
ND20359

RNCC
5
RNVC
2
NS7386

RNCC
5
RNVC
9
SA2731

RNCC
5
RNVC
9
SD8006H

RNCC
5
RNVC
9
TX2N2222DUAL

RNCC
5
RNVC
2
TXGT7129

RNCC
5
RNVC
9

Related Inventory



 
Top