NSN 1005-13-102-6002, 1005131026002
CATCH,BAYONET

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BODY HEIGHT: (ADAU) 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: (ADAQ) 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
BODY WIDTH: (ADAT) 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: (CSSL) 2 DRIVER, HIGH CURRENT AND 2 DRIVER, NAND AND 2 DRIVER, PERIPHERAL
FEATURES PROVIDED: (CBBL) HIGH CURRENT AND HIGH SPEED AND HIGH VOLTAGE AND INTERNALLY COMPENSATED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: (CQSZ) DUAL-IN-LINE
INCLOSURE MATERIAL: (CQSJ) PLASTIC
INPUT CIRCUIT PATTERN: (CQZP) DUAL 2 INPUT
OPERATING TEMP RANGE: (AFGA) +0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: (CQWX) TRANSISTOR-TRANSISTOR LOGIC
MAXIMUM POWER DISSIPATION RATING: (AEHX) 800.0 MILLIWATTS
PRECIOUS MATERIAL: (PRMT) GOLD
PRECIOUS MATERIAL AND LOCATION: (PMLC) TERMINAL SURFACES OPTIONAL GOLD
TIME RATING PER CHACTERISTIC: (CZEQ) 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: (CZEN) 7.0 VOLTS MAXIMUM POWER SOURCE
STORAGE TEMP RANGE: (AFJQ) -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: (CWSG) GOLD
TERMINAL TYPE AND QUANTITY: (TTQY) 8 PRINTED CIRCUIT
STORAGE TEMP RANGE: (AFJQ) -65.0/+150.0 DEG CELSIUS
OPERATING TEMP RANGE: (AFGA) +0.0/+70.0 DEG CELSIUS