NSN 1560-15-101-6900, 1560151016900
MOUNTING

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 200.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC: (CTQX) 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
POWER RATING PER CHARACTERISTIC: (CTRD) 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CURRENT RATING PER CHARACTERISTIC: (CTQX) 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 200.0 CELSIUS JUNCTION
MOUNTING METHOD: (AXGY) TERMINAL
OVERALL DIAMETER: (ADAV) 0.370 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: (CTRD) 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: (AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH: (ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
INCLOSURE MATERIAL: (ABBH) METAL
UNABLE TO DECODE: (ABBH) UNABLE TO DECODE