NSN 2815-15-141-9500, 2815151419500
BILANCIERE

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CURRENT RATING PER CHARACTERISTIC: (CTQX) 10.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 15.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
INCLOSURE MATERIAL: (ABBH) METAL
UNABLE TO DECODE: (ABBH) UNABLE TO DECODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: (ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC: (CTQX) 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL DIAMETER: (ADAV) 0.875 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.375 INCHES NOMINAL
MOUNTING FACILITY QUANTITY: (AKPV) 2
MOUNTING METHOD: (AXGY) UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: (CTRD) 175.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: (ZZZK) 80131-RELEASE6578 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: (TTQY) 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 850.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 9.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 175.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM