NSN 4010-15-103-1100, 4010151031100
ROPE, WIRE

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 20.8 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CURRENT RATING PER CHARACTERISTIC: (CTQX) 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: (ABBH) PLASTIC
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL DIAMETER: (ADAV) 0.495 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.635 INCHES MINIMUM AND 0.645 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: (AKPV) 1
MOUNTING METHOD: (AXGY) UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 20.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD