NSN 4120-15-102-1101, 4120151021101
UMIDOSTATO

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UNABLE TO DECODE: (ABBH) UNABLE TO DECODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: (ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC: (CTQX) 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL DIAMETER: (ADAV) 0.360 INCHES NOMINAL
OVERALL LENGTH: (ABHP) 0.250 INCHES NOMINAL
MOUNTING METHOD: (AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC: (CTRD) 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: (AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH: (ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
POWER RATING PER CHARACTERISTIC: (CTRD) 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
INCLOSURE MATERIAL: (ABBH) METAL
CURRENT RATING PER CHARACTERISTIC: (CTQX) 0.40 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON