NSN 5305-15-110-9700, 5305151109700
VIS

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC: (CTQX) 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: (ABBH) PLASTIC
INTERNAL CONFIGURATION: (ALAS) FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: (ALAZ) TO-92
OVERALL HEIGHT: (ABKW) 0.210 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.205 INCHES MAXIMUM
OVERALL WIDTH: (ABMK) 0.165 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: (AXGY) TERMINAL
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) -30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE
TERMINAL LENGTH: (ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: (TEST) 80009-151-1097-00 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)