NSN 5330-15-102-2100, 5330151022100
GASKET

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
MATERIAL: (MATT) PLASTIC INCLOSURE
INCLOSURE MATERIAL: (ABBH) PLASTIC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL LENGTH: (ABHP) 0.210 INCHES MAXIMUM
MATERIAL: (MATT) PLASTIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 125.0 CELSIUS AMBIENT AIR
MOUNTING METHOD: (AXGY) TERMINAL
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
UNABLE TO DECODE: (ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 125.0 DEG CELSIUS AMBIENT AIR