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NSN 5961-00-058-4172, 5961000584172
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000584172
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-058-4172

National Stock Number (NSN) 5961-00-058-4172, or NIIN 000584172, (transistor) was assigned January 1, 1961 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000584172 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTORCOLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPNNPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS AMBIENT AIR200.0 CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
OVERALL DIAMETER
(ADAV) 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPN
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MOUNTING METHOD
(AXGY) TERMINAL
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL
(ABBH) METAL
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 2.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR

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