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NSN 5961-00-068-8231, 5961000688231
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000688231
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-068-8231

National Stock Number (NSN) 5961-00-068-8231, or NIIN 000688231, (semiconductor device,thyristor) was assigned January 1, 1963 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 5 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 3 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000688231 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 18.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
MOUNTING FACILITY QUANTITY
(AKPV) 1
CURRENT RATING PER CHARACTERISTIC
(CTQX) 18.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC18.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.650 INCHES MAXIMUM0.650 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.505 INCHES MAXIMUM0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 0.562 INCHES MAXIMUM0.562 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 11
MOUNTING METHOD
(AXGY) THREADED STUDTHREADED STUD
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES0.250 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
SPECIAL FEATURES
(FEAT) INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPNINTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
SPECIFICATION/STANDARD DATA
(ZZZK) 80131-RELEASE3681 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION80131-RELEASE3681 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY
(TTQY) 1 THREADED STUD AND 1 THREADED STUD AND 2 SOLDER STUD2 SOLDER STUD
THREAD SERIES DESIGNATOR
(THSD) UNFUNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 400.0 MAXIMUM BREAKOVER VOLTAGE, DC400.0 MAXIMUM BREAKOVER VOLTAGE, DC
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
THREAD SERIES DESIGNATOR
(THSD) UNF
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MOUNTING METHOD
(AXGY) THREADED STUD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION

Manufacturer Part Numbers

2315691

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5
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2315691

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2N688A

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2N688A

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2N688A

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RELEASE3681

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5
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