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NSN 5961-00-069-5057, 5961000695057
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000695057
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-069-5057

National Stock Number (NSN) 5961-00-069-5057, or NIIN 000695057, (semiconductor device,thyristor) was assigned February 16, 1972 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 4 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 2 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) The Government has unlimited rights to the technical data, and the data package is complete. Valid AMCs: 1 and 2.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000695057 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 7.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
INCLOSURE MATERIAL
(ABBH) METAL
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODEANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 CELSIUS JUNCTION100.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 11
MOUNTING METHOD
(AXGY) THREADED STUDTHREADED STUD
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES0.250 INCHES
OVERALL LENGTH
(ABHP) 0.535 INCHES MAXIMUM0.535 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 0.559 INCHES MAXIMUM0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPNJUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA
(ZZZK) 80131-RELEASE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION80131-RELEASE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY
(TTQY) 2 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG AND 1 THREADED STUD1 THREADED STUD
THREAD SERIES DESIGNATOR
(THSD) UNFUNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 400.0 MAXIMUM BREAKOVER VOLTAGE, DC400.0 MAXIMUM BREAKOVER VOLTAGE, DC
MOUNTING FACILITY QUANTITY
(AKPV) 1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
POWER RATING PER CHARACTERISTIC
(CTRD) 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
MOUNTING METHOD
(AXGY) THREADED STUD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 DEG CELSIUS JUNCTION
THREAD SERIES DESIGNATOR
(THSD) UNF
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

Manufacturer Part Numbers

010034

RNCC
5
RNVC
2
2N5170

RNCC
5
RNVC
9
2N5170

RNCC
3
RNVC
9
2N5170A

RNCC
5
RNVC
9
RELEASE5700

RNCC
5
RNVC
9
2N5170

ISC
5
RNCC
C
RNVC
1
2N5170A

RNCC
5
RNVC
2

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