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NSN 5961-00-069-6662, 5961000696662
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000696662
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-069-6662

National Stock Number (NSN) 5961-00-069-6662, or NIIN 000696662, (semiconductor device,thyristor) was assigned July 11, 1967 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 5 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Feb 02, 2008, this NSN's acquisition method was noted as: Suitable for competitive acquisition for the first time. (Potential sources shall include dealers/distributors.) The Government has unlimited rights to the technical data, and the data package is complete. Valid AMCs: 1 and 2.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000696662 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
OVERALL LENGTH
(ABHP) 0.938 INCHES MAXIMUM0.938 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 1.062 INCHES MAXIMUM1.062 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 11
MOUNTING METHOD
(AXGY) THREADED STUDTHREADED STUD
NOMINAL THREAD SIZE
(CQJX) 0.500 INCHES0.500 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPNJUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY
(TTQY) 1 THREADED STUD AND 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD W/TERMINAL LUG3 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR
(THSD) UNFUNF
INCLOSURE MATERIAL
(ABBH) METAL
CURRENT RATING PER CHARACTERISTIC
(CTQX) 30.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
MOUNTING FACILITY QUANTITY
(AKPV) 1
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
THREAD SERIES DESIGNATOR
(THSD) UNF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
NOMINAL THREAD SIZE
(CQJX) 0.500 INCHES
MOUNTING METHOD
(AXGY) THREADED STUD

Manufacturer Part Numbers

211Z

ISC
2
RNCC
5
RNVC
1
213B126

RNCC
5
RNVC
9
251Z

ISC
2
RNCC
5
RNVC
1
40131750701

RNCC
3
RNVC
2
509C545G41

RNCC
5
RNVC
9

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