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NSN 5961-00-077-2119, 5961000772119
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000772119
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-077-2119

National Stock Number (NSN) 5961-00-077-2119, or NIIN 000772119, (semiconductor device,thyristor) was assigned August 2, 1967 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 7 manufacturer part numbers associated with this NSN. 6 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 7 suppliers. Today, 5 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000772119 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODEANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 2.00 AMPERES MAXIMUM GATE CURRENT AND 2.00 AMPERES MAXIMUM GATE CURRENT AND 60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-66TO-66
OVERALL HEIGHT
(ABKW) 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 1.252 INCHES MAXIMUM1.252 INCHES MAXIMUM
OVERALL WIDTH
(ABMK) 0.700 INCHES NOMINAL0.700 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 CELSIUS AMBIENT AIR100.0 CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY
(AKPV) 22
MOUNTING METHOD
(AXGY) UNTHREADED HOLEUNTHREADED HOLE
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS MAXIMUM GATE POWER DISSIPATION5.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
TERMINAL LENGTH
(ABJT) 0.360 INCHES MINIMUM0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 1 CASE OR 1 CASE OR 2 PIN2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK600.0 MAXIMUM FORWARD VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR NOT APPLICABLE
TERMINAL TYPE AND QUANTITY
(TTQY) 1 CASE OR 2 PIN
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INCLOSURE MATERIAL
(ABBH) METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-66
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MOUNTING FACILITY QUANTITY
(AKPV) 2
CURRENT RATING PER CHARACTERISTIC
(CTQX) 2.00 AMPERES SOURCE CUTOFF CURRENT MINOR AND 60.00 AMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ

Manufacturer Part Numbers

2N4101

RNCC
5
RNVC
2
2N4101

RNCC
5
RNVC
2
2N4101

RNCC
5
RNVC
9
2N4101

RNCC
3
RNVC
9
40555

RNCC
5
RNVC
9
5961000772119

RNCC
5
RNVC
9
60050

RNCC
5
RNVC
9
9138C3012

RNCC
5
RNVC
9
RELEASE5234

RNCC
5
RNVC
9
S3700M

RNCC
C
RNVC
1
5961000772119

RNCC
6
RNVC
9

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