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NSN 5961-00-081-9001, 5961000819001
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000819001
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-081-9001

National Stock Number (NSN) 5961-00-081-9001, or NIIN 000819001, (transistor) was assigned January 1, 1961 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

There has been a small amount of demand for this national stock number. Globally, demand for this NSN has originated from 6 countries.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000819001 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTORCOLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPNNPN
OVERALL DIAMETER
(ADAV) 0.310 INCHES NOMINAL0.310 INCHES NOMINAL
OVERALL LENGTH
(ABHP) 0.230 INCHES NOMINAL0.230 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT
(TEST) 03640-6020551 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)03640-6020551 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPN
MOUNTING METHOD
(AXGY) TERMINAL
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 800.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE

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