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NSN 5961-00-082-3697, 5961000823697
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000823697
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-082-3697

National Stock Number (NSN) 5961-00-082-3697, or NIIN 000823697, (transistor) was assigned January 1, 1963 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. 4 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 5 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 3 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is unique to one weapons system.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000823697 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 60.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
INCLOSURE MATERIAL
(ABBH) METAL
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM
MOUNTING METHOD
(AXGY) TERMINAL
SEMICONDUCTOR MATERIAL
(CTMZ) GERMANIUM
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
OVERALL DIAMETER
(ADAV) 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 60.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION60.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) GERMANIUMGERMANIUM
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA
(ZZZK) 80131-RELEASE3085 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION80131-RELEASE3085 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 20.5 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.5 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 0.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN0.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
III SEMICONDUCTOR MATERIAL
(CTMZ) GERMANIUM
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT

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