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NSN 5961-00-098-7835, 5961000987835
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000987835
Codification Country
United States
Item Name Code
INC 20588
Criticality
(Y) This item does not have a nuclear hardened feature but does have other critical feature(s) such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-098-7835

National Stock Number (NSN) 5961-00-098-7835, or NIIN 000987835, (transistor) was assigned December 13, 1972 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has a strong supply network for this NSN, with 12 sources of supply.

This part number has not been procured by the US Government in over 5 years.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature but does have other critical feature(s) such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000987835 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

MOUNTING METHOD
(AXGY) TERMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INCLOSURE MATERIAL
(ABBH) METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTORCOLLECTOR
CRITICALITY CODE JUSTIFICATION
(CRTL) FEATFEAT
CURRENT RATING PER CHARACTERISTIC
(CTQX) 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.335 INCHES MINIMUM AND 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.240 INCHES MINIMUM AND 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
SPECIAL FEATURES
(FEAT) ITEM MUST COMPLY W/RQMT OF DESC PRODUCTION STD NO. L00899; JUNCTION PATTERN ARRANGEMENT: PNPITEM MUST COMPLY W/RQMT OF DESC PRODUCTION STD NO. L00899; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
POWER RATING PER CHARACTERISTIC
(CTRD) 600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
CRITICALITY CODE JUSTIFICATION
(CRTL) FEAT
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

Manufacturer Part Numbers

2N1132

RNCC
5
RNVC
9
JAN2N1132

RNCC
3
RNVC
1
JAN2N1132

RNCC
5
RNVC
9
JAN2N1132A

RNCC
5
RNVC
9
L00899

RNCC
3
RNVC
2
JAN2N1132

RNCC
C
RNVC
1

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