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NSN 5961-00-103-7385, 5961001037385
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 001037385
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-103-7385

National Stock Number (NSN) 5961-00-103-7385, or NIIN 001037385, (transistor) was assigned June 12, 1968 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 10 suppliers. Today, 5 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has been procured by the US Government within the last year, but shows no recent (last 90 days) procurement activity. There have been 5 contracts issued for this part number, with 5 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 3 different suppliers. The last contract numbers awarded were: SPE7M525P1296, SPE7M518PE027, SPE7M515MB865, SPE7M515MB865, SPE7MC14M3305. The total value of the awarded contracts has been US$ 89,523.28.

This NSN is very common among different weapons systems, belonging to 30 different platforms.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. The 24 month forecast from the US Government for this part number has high volatility, with an estimated forecasted value of US$ 5,469. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Sep 14, 2016, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961001037385 contains an unknown precious metal.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 25.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MOUNTING METHOD
(AXGY) TERMINAL
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.50 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 3.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTORCOLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.50 AMPERES MAXIMUM BASE CURRENT, DC AND 1.50 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.650 INCHES MAXIMUM0.650 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.330 INCHES MAXIMUM0.330 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPNJUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER
(AYQS) 0.146 INCHES MAXIMUM0.146 INCHES MAXIMUM
TERMINAL LENGTH
(ABJT) 0.440 INCHES MAXIMUM0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL
(ABBH) METAL

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