ISO Group Logo
Defense and Aerospace
Supply Chain Partner
A Dynatech International Company


NSN 5961-00-104-1169, 5961001041169
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 001041169
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

Manufacture or supply this part?
Join our growing community of certified suppliers.

Let Us Know
  CALL ABOUT NSN 5961-00-104-1169
Our client representatives are standing by to help fulfill your request.

+1-321-773-5710

  REQUEST QUOTE for 5961-00-104-1169


Have a list that needs to be quoted? Upload it here.

DLMS® Summary

National Stock Number 5961-00-104-1169

National Stock Number (NSN) 5961-00-104-1169, or NIIN 001041169, (transistor) was assigned June 14, 1968 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961001041169 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) GATEGATE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.0 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT50.0 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) FIELD EFFECTFIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
OVERALL DIAMETER
(ADAV) 0.220 INCHES NOMINAL0.220 INCHES NOMINAL
OVERALL LENGTH
(ABHP) 0.188 INCHES NOMINAL0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
TERMINAL CIRCLE DIAMETER
(AYQS) 0.100 INCHES NOMINAL0.100 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
INTERNAL CONFIGURATION
(ALAS) FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
CHANNEL POLARITY AND CONTROL TYPE (NON-CORE)
(ALAT) N-CHANNEL JUNCTION TYPE
MOUNTING METHOD
(AXGY) TERMINAL
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INCLOSURE MATERIAL
(ABBH) METAL
UNABLE TO DECODE
(ALAT) UNABLE TO DECODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) GATE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

Manufacturer Part Numbers


Related Inventory

JANTXV2N4856
Readily Available
2N4856
Semiconductor
Readily Available
J2N4856
Readily Available
JAN2N4856
Readily Available
7671CJANTX2N4856
5961-01-077-2946
Condition NS
TRANSISTOR
Readily Available
JANTX2N4856CGG
Readily Available


 
Top