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NSN 5961-00-107-5382, 5961001075382
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 001075382
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-107-5382

National Stock Number (NSN) 5961-00-107-5382, or NIIN 001075382, (transistor) was assigned December 20, 1972 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on May 19, 2020, this NSN's acquisition method was noted as: Not established. Not established.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961001075382 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 670.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
MOUNTING FACILITY QUANTITY
(AKPV) 2
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTORCOLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPNNPN
OVERALL DIAMETER
(ADAV) 0.875 INCHES MAXIMUM0.875 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.375 INCHES NOMINAL0.375 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS CASE200.0 CELSIUS CASE
MOUNTING FACILITY QUANTITY
(AKPV) 22
MOUNTING METHOD
(AXGY) UNTHREADED HOLEUNTHREADED HOLE
POWER RATING PER CHARACTERISTIC
(CTRD) 670.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION670.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD AND 2 UNINSULATED WIRE LEAD AND 1 CASE1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
INCLOSURE MATERIAL
(ABBH) METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPN
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
CURRENT RATING PER CHARACTERISTIC
(CTQX) 7.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS CASE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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