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NSN 5961-00-156-0559, 5961001560559
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 001560559
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-156-0559

National Stock Number (NSN) 5961-00-156-0559, or NIIN 001560559, (transistor) was assigned October 24, 1971 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 6 manufacturer part numbers associated with this NSN. 4 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 6 suppliers. Today, 5 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 8 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961001560559 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 3.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINIMUM
INCLOSURE MATERIAL
(ABBH) METAL
CURRENT RATING PER CHARACTERISTIC
(CTQX) 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 34.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA
(ZZZK) 80131-RELEASE5831 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
POWER RATING PER CHARACTERISTIC
(CTRD) 34.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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