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NSN 5961-00-457-5612, 5961004575612
SEMICONDUCTOR DEVICES,UNITIZED

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 004575612
Codification Country
United States
Item Name Code
INC 61962
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-457-5612

National Stock Number (NSN) 5961-00-457-5612, or NIIN 004575612, (semiconductor devices,unitized) was assigned September 8, 1969 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is unique to one weapons system.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 61962. [TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES:DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES:NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961004575612 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
CURRENT RATING PER CHARACTERISTIC
(CTQX) 30.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
COMPONENT NAME AND QUANTITY
(ASKA) 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
OVERALL DIAMETER
(ADAV) 0.335 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM
MOUNTING METHOD
(AXGY) TERMINAL
SPECIAL FEATURES
(FEAT) ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
POWER RATING PER CHARACTERISTIC
(CTRD) 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 6 UNINSULATED WIRE LEAD
TRANSFER RATIO
(CTRK) 40.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL TRANSISTOR

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2N2805

RNCC
5
RNVC
1
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1
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RNVC
9
401111

RNCC
3
RNVC
2

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