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NSN 5961-00-824-7516, 5961008247516
Cancelled -> Replaced by 5961010689531

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 008247516
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-824-7516

National Stock Number (NSN) 5961-00-824-7516, or NIIN 008247516, (semiconductor device,thyristor) was assigned August 23, 1967 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN replaces 1 stock number, 5961010689531.

There are 4 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 3 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 19, 2015, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961008247516 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1000.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL LENGTH
(ABHP) 3.327 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS
(CCDG) 1.063 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD(S)
NOMINAL THREAD SIZE
(CQJX) 0.500 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 500.0 MAXIMUM BREAKOVER VOLTAGE, DC
TERMINAL TYPE AND QUANTITY
(TTQY) 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR
(THSD) UNF
INCLOSURE MATERIAL
(ABBH) METAL
MOUNTING METHOD
(AXGY) THREADED STUD
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1000.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE

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