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NSN 5961-00-841-1613, 5961008411613
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 008411613
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-841-1613

National Stock Number (NSN) 5961-00-841-1613, or NIIN 008411613, (transistor) was assigned January 1, 1962 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 7 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 10 suppliers. Today, 8 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 6 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over a year. There have been 10 contracts issued for this part number, with 10 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 5 different suppliers. The last contract numbers awarded were: SPE7M522P2410, SPE7M522P2087, SPE7M521P7015, SPE7M518P9255, SPE7M917V2832. The total value of the awarded contracts has been US$ 50,888.07.

This NSN is somewhat common among different platforms, belonging to 3 different weapons systems.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961008411613 does not contain precious metals.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 150.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
INCLOSURE MATERIAL
(ABBH) METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 150.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC
(CTRD) 125.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE

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