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NSN 5961-00-900-5519, 5961009005519
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009005519
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-900-5519

National Stock Number (NSN) 5961-00-900-5519, or NIIN 009005519, (transistor) was assigned February 10, 1967 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 2 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Not established. Not established.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009005519 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.219 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.070 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER
(AYQS) 0.100 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL
(ABBH) METAL
POWER RATING PER CHARACTERISTIC
(CTRD) 1.2 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM

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