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NSN 5961-00-901-5422, 5961009015422
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009015422
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-901-5422

National Stock Number (NSN) 5961-00-901-5422, or NIIN 009015422, (semiconductor device,thyristor) was assigned January 1, 1960 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 4 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 10 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Jul 02, 2005, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009015422 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 0.10 AMPERES MAXIMUM GATE CURRENT AND 1.60 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 100.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 10.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 6.0 MAXIMUM PEAK POSITIVE GATE VOLTAGE AND 6.0 MAXIMUM PEAK NEGATIVE GATE VOLTAGE AND 300.0 MAXIMUM FORWARD VOLTAGE, PEAK
POWER RATING PER CHARACTERISTIC
(CTRD) 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK AND 10.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR UNIVERSAL
INCLOSURE MATERIAL
(ABBH) METAL
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 AMPERES SOURCE CUTOFF CURRENT PEAK AND 0.10 AMPERES SOURCE CUTOFF CURRENT MINOR AND 1.60 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM OF STANDARD RANGE

Manufacturer Part Numbers

18840009

RNCC
C
RNVC
1
18840038

RNCC
C
RNVC
1
C6B

RNCC
3
RNVC
9
C6B

RNCC
5
RNVC
2
C6B

RNCC
5
RNVC
9
C6G

RNCC
C
RNVC
1

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