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NSN 5961-00-952-5696, 5961009525696
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009525696
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-952-5696

National Stock Number (NSN) 5961-00-952-5696, or NIIN 009525696, (transistor) was assigned January 1, 1960 in the Federal Logistics Information System (FLIS). This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009525696 contains an unknown precious metal.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
POWER RATING PER CHARACTERISTIC
(CTRD) 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
OVERALL DIAMETER
(ADAV) 0.335 INCHES MAXIMUM
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
MOUNTING METHOD
(AXGY) TERMINAL
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION

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