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NSN 5961-01-019-8765, 5961010198765
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 010198765
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-019-8765

National Stock Number (NSN) 5961-01-019-8765, or NIIN 010198765, (transistor) was assigned April 20, 1976 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 4 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is very common among different weapons systems, belonging to 39 different platforms.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Dec 19, 2007, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) Acquisition of this part is restricted to source(s) specified on "Source Control", "Altered Item" or "Selected Item" drawings/documents. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961010198765 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
CHANNEL POLARITY AND CONTROL TYPE (NON-CORE)
(ALAT) N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL
(ABBH) METAL
POWER RATING PER CHARACTERISTIC
(CTRD) 330.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
UNABLE TO DECODE
(ALAT) UNABLE TO DECODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 175.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED
(CBBL) ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 175.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 330.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL CIRCLE DIAMETER
(AYQS) 0.100 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) -0.2 MINIMUM DRAIN TO SOURCE VOLTAGE AND 18.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.5 MAXIMUM DRAIN TO GATE VOLTAGE

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