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NSN 5961-01-065-5569, 5961010655569
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 010655569
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-065-5569

National Stock Number (NSN) 5961-01-065-5569, or NIIN 010655569, (semiconductor device,thyristor) was assigned September 21, 1978 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) The Government physically does not have in its possession sufficient, accurate, or legible data to purchase this part from other than current source(s). (NOTE: This code is applicable only to parts under immediate buy requirements and only as long as the deficiency is under review for resolution and appropriate recoding.) Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961010655569 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 16.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS NOMINAL AND 10.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT AND 10.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
INCLOSURE MATERIAL
(ABBH) METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-83
NOMINAL THREAD SIZE
(CQJX) 0.500 INCHES
OVERALL DIAMETER
(ADAV) 1.031 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 2.637 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
THREAD SERIES DESIGNATOR
(THSD) UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 1500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
TERMINAL TYPE AND QUANTITY
(TTQY) 2 TAB, SOLDER LUG AND 1 THREADED STUD

Manufacturer Part Numbers


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