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NSN 5961-01-110-0668, 5961011100668
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011100668
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-110-0668

National Stock Number (NSN) 5961-01-110-0668, or NIIN 011100668, (transistor) was assigned March 25, 1981 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 9 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 9 suppliers. Today, 7 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 3 suppliers are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is fairly common among different weapons systems, belonging to 24 different platforms.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Jan 01, 2013, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) The data or the rights to use the data needed to purchase this part from additional sources are not owned by the Government and it has been determined that it is uneconomical to purchase them. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011100668 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL
(ABBH) CERAMIC
CURRENT RATING PER CHARACTERISTIC
(CTQX) 70.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM
CURRENT RATING PER CHARACTERISTIC
(CTQX) 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
MATERIAL
(MATT) CERAMIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) PRESS FIT
OVERALL DIAMETER
(ADAV) 2.1 MILLIMETERS NOMINAL
OVERALL LENGTH
(ABHP) 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 290.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL TYPE AND QUANTITY
(TTQY) 4 RIBBON
TRANSFER RATIO
(CTRK) 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MATERIAL
(MATT) CERAMIC INCLOSURE
POWER RATING PER CHARACTERISTIC
(CTRD) 290.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET

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