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NSN 5961-01-117-5660, 5961011175660
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011175660
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-117-5660

National Stock Number (NSN) 5961-01-117-5660, or NIIN 011175660, (transistor) was assigned August 16, 1981 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of Oct 26, 2011. There have been 2 contracts issued for this part number, with 2 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 2 different suppliers. The last contract numbers awarded were: SPM7M512M0298, SPM7M510M3772. The total value of the awarded contracts has been US$ 10,797.40.

This NSN is somewhat common among different platforms, belonging to 3 different weapons systems.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on May 22, 2008, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) The annual buy value of this part falls below the screening threshold of $10,000 but it has been screened for known source(s). (NOTE: This code shall not be used when screening parts entering the inventory. It shall not be assigned in preference to or supersede any other AMSC.) Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011175660 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 75.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
END ITEM IDENTIFICATION
(AGAV) AN/APX-76B 80249 FSCM
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.285 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.210 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 2
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
TERMINAL TYPE AND QUANTITY
(TTQY) 1 FLANGE AND 2 PIN
TEST DATA DOCUMENT
(TEST) 80249-911376 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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