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NSN 5961-01-120-9314, 5961011209314
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011209314
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-120-9314

National Stock Number (NSN) 5961-01-120-9314, or NIIN 011209314, (semiconductor device,thyristor) was assigned October 25, 1981 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of Jan 15, 2013. There has been one contract issued for this part number, with one award given. The US Government has only awarded those contracts to one supplier. The last contract numbers awarded were: SPM7M613M0837. The total value of the awarded contracts has been US$ 159.00.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Nov 05, 2010, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. The annual buy value of this part falls below the screening threshold of $10,000 but it has been screened for known source(s). (NOTE: This code shall not be used when screening parts entering the inventory. It shall not be assigned in preference to or supersede any other AMSC.) Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011209314 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 470.00 AMPERES FORWARD CURRENT, AVERAGE MEGAHERTZ AND 11000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
POWER RATING PER CHARACTERISTIC
(CTRD) 3.0 WATTS ANY ACCEPTABLE UNIVERSAL AND 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 470.00 AMPERES MAXIMUM REVERSE CURRENT, TOTAL RMS AND 11000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL
(ABBH) METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-118
NOMINAL THREAD SIZE
(CQJX) 0.750 INCHES
OVERALL LENGTH
(ABHP) 10.463 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS
(CCDG) 1.668 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 3.0 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION AND 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
THREAD SERIES DESIGNATOR
(THSD) UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 1100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 470.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
TERMINAL TYPE AND QUANTITY
(TTQY) 1 THREADED STUD AND 3 INSULATED WIRE LEAD W/TERMINAL LUG
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

Manufacturer Part Numbers


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