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NSN 5961-01-167-4028, 5961011674028
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011674028
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-167-4028

National Stock Number (NSN) 5961-01-167-4028, or NIIN 011674028, (semiconductor device,thyristor) was assigned November 28, 1983 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 5 suppliers. Today, 4 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011674028 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 400.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
CURRENT RATING PER CHARACTERISTIC
(CTQX) 225.00 AMPERES FORWARD CURRENT, TOTAL RMS HORSEPOWER METRIC AND 1600.00 AMPERES FORWARD CURRENT, TOTAL RMS WATTS
CURRENT RATING PER CHARACTERISTIC
(CTQX) 225.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1600.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED
(AFZC) RECTIFIER AND REVERSE BLOCKING
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 400.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM OFF-STATE VOLTAGE, PEAK AND 960.0 MAXIMUM REVERSE VOLTAGE, PEAK

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