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NSN 5961-01-168-3039, 5961011683039
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011683039
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-168-3039

National Stock Number (NSN) 5961-01-168-3039, or NIIN 011683039, (semiconductor device,thyristor) was assigned December 15, 1983 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There is only one manufacturer part number associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 4 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011683039 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 4.00 AMPERES DRAIN CURRENT HORSEPOWER METRIC AND 20.00 AMPERES PEAK FORWARD SURGE CURRENT ABSOLUTE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE AND UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 110.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 20.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-225AA
MATERIAL
(MATT) PLASTIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 110.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
OVERALL HEIGHT
(ABKW) 0.105 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.435 INCHES MAXIMUM
OVERALL WIDTH
(ABMK) 0.305 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL LENGTH
(ABJT) 0.575 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 100.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MATERIAL
(MATT) PLASTIC INCLOSURE
INCLOSURE MATERIAL
(ABBH) PLASTIC AND METAL

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