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NSN 5961-01-168-3040, 5961011683040
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011683040
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-168-3040

National Stock Number (NSN) 5961-01-168-3040, or NIIN 011683040, (transistor) was assigned December 15, 1983 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Dec 21, 2013, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. The Government physically does not have in its possession sufficient, accurate, or legible data to purchase this part from other than current source(s). (NOTE: This code is applicable only to parts under immediate buy requirements and only as long as the deficiency is under review for resolution and appropriate recoding.) Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011683040 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
MATERIAL
(MATT) PLASTIC INCLOSURE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-106
OVERALL DIAMETER
(ADAV) 0.220 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.240 INCHES MAXIMUM
MATERIAL
(MATT) PLASTIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER
(AYQS) 0.100 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
TRANSFER RATIO
(CTRK) 40.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INCLOSURE MATERIAL
(ABBH) PLASTIC

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