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NSN 5961-01-184-5458, 5961011845458
SEMICONDUCTOR DEVICE,PHOTO

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 011845458
Codification Country
United States
Item Name Code
INC 20587
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-184-5458

National Stock Number (NSN) 5961-01-184-5458, or NIIN 011845458, (semiconductor device,photo) was assigned July 19, 1984 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of May 26, 2015. There have been 2 contracts issued for this part number, with 2 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 2 different suppliers. The last contract numbers awarded were: SPE7M515M8577, SPE7M514M4231, SPE7M514M4231, SPE7M514M4231. The total value of the awarded contracts has been US$ 16,633.92.

This NSN is fairly common among different weapons systems, belonging to 16 different platforms.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Apr 10, 2015, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20587. [A SEMICONDUCTOR DEVICE (1) WHICH IS RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES:SEMICONDUCTOR DEVICE (1), DIODE; SEMICONDUCTOR DEVICE (1), THYRISTOR AND TRANSISTOR. FOR SOLID STATE DEVICES WHICH EMIT VISIBLE OR INFRARED RADIANT ENERGY, SEE LIGHT EMITTING DIODE.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961011845458 does not contain precious metals.

This NSN is associated to Schedule B 8541409500: photosensitive semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.093 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.125 INCHES MAXIMUM
MATERIAL
(MATT) CERAMIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) PRESS FIT
POWER RATING PER CHARACTERISTIC
(CTRD) 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) GALLIUM ARSENIDE
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 3.0 MAXIMUM REVERSE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS AMBIENT AIR
MATERIAL
(MATT) CERAMIC INCLOSURE
INCLOSURE MATERIAL
(ABBH) CERAMIC
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE

Manufacturer Part Numbers


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