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NSN 5961-01-203-4101, 5961012034101
SEMICONDUCTOR DEVICE,DIODE

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 012034101
Codification Country
United States
Item Name Code
INC 20589
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-203-4101

National Stock Number (NSN) 5961-01-203-4101, or NIIN 012034101, (semiconductor device,diode) was assigned April 19, 2007 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 5 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has a strong supply network for this NSN, with 12 sources of supply.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of Nov 13, 2019. There have been 2 contracts issued for this part number, with 2 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 2 different suppliers. The last contract numbers awarded were: SPE7M520P1180, SPE7M520P1180, SPE7M518PG477. The total value of the awarded contracts has been US$ 21,355.52.

This NSN is unique to one weapons system.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Jul 23, 2019, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) Acquisition of this part is controlled by QPL procedures. Valid AMCs: 1 and 2.

This NSN is assigned to Item Name Code (INC) 20589. [A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961012034101 contains gold.

This NSN is associated to Schedule B 8541100070: diodes, other than photosensitve or led, with a maximum current of 0.5 a or less. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
END ITEM IDENTIFICATION
(AGAV) B-1B
CURRENT RATING PER CHARACTERISTIC
(CTQX) 200.0 AMPERES MAXIMUM AVERAGE GATE POWER DISSIPATION
FEATURES PROVIDED
(CBBL) GOLD PLATED LEADS
OVERALL LENGTH
(ABHP) 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM
MATERIAL
(MATT) SILICON SEMICONDUCTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) -65.0 CELSIUS AMBIENT AIR AND 175.00 CELSIUS AMBIENT AIR
PART NAME ASSIGNED BY CONTROLLING AGENCY
(CXCY) SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
PRECIOUS MATERIAL AND LOCATION
(PMLC) BACK (CATHODE) GOLD
PRECIOUS MATERIAL
(PRMT) GOLD
SPECIAL FEATURES
(FEAT) METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010",+ OR - .002"
TERMINAL CIRCLE DIAMETER
(AYQS) 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
III PRECIOUS MATERIAL AND LOCATION
(PMLC) BACK (CATHODE) GOLD
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
III PART NAME ASSIGNED BY CONTROLLING AGENCY
(CXCY) SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
III END ITEM IDENTIFICATION
(AGAV) B-1B
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) -65.0 DEG CELSIUS AMBIENT AIR AND 175.00 DEG CELSIUS AMBIENT AIR
III PRECIOUS MATERIAL
(PRMT) GOLD

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