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NSN 5961-01-215-4715, 5961012154715
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 012154715
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-215-4715

National Stock Number (NSN) 5961-01-215-4715, or NIIN 012154715, (transistor) was assigned August 25, 1985 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 4 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 2 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on May 21, 2008, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961012154715 contains gold.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 2.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 0.50 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
CURRENT RATING PER CHARACTERISTIC
(CTQX) 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
PRECIOUS MATERIAL AND LOCATION
(PMLC) LEADS GOLD
PRECIOUS MATERIAL
(PRMT) GOLD
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
TRANSFER RATIO
(CTRK) 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC
(CTRD) 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET

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