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NSN 5961-01-225-8997, 5961012258997
SEMICONDUCTOR DEVICE,DIODE

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 012258997
Codification Country
United States
Item Name Code
INC 20589
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-225-8997

National Stock Number (NSN) 5961-01-225-8997, or NIIN 012258997, (semiconductor device,diode) was assigned February 8, 1986 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is unique to one weapons system.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20589. [A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961012258997 does not contain precious metals.

This NSN is associated to Schedule B 8541100070: diodes, other than photosensitve or led, with a maximum current of 0.5 a or less. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) GLASS
CURRENT RATING PER CHARACTERISTIC
(CTQX) 3.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE
POWER RATING PER CHARACTERISTIC
(CTRD) 3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CURRENT RATING PER CHARACTERISTIC
(CTQX) 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
OVERALL DIAMETER
(ADAV) 0.205 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.350 INCHES MAXIMUM
MATERIAL
(MATT) GLASS INCLOSURE
MATERIAL
(MATT) SILICON SEMICONDUCTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
TERMINAL LENGTH
(ABJT) 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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