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NSN 5961-01-267-3997, 5961012673997
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 012673997
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-267-3997

National Stock Number (NSN) 5961-01-267-3997, or NIIN 012673997, (semiconductor device,thyristor) was assigned November 10, 1987 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 4 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is unique to one weapons system.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Dec 10, 2014, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. The data needed to produce this item from additional sources is not physically available. Valid AMCs: 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961012673997 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 200.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 8.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FUNCTION FOR WHICH DESIGNED
(AFZC) RECTIFIER
INCLOSURE MATERIAL
(ABBH) PLASTIC
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-220AB
OVERALL HEIGHT
(ABKW) 0.546 INCHES NOMINAL
OVERALL LENGTH
(ABHP) 0.705 INCHES NOMINAL
OVERALL WIDTH
(ABMK) 0.400 INCHES NOMINAL
MOUNTING METHOD
(AXGY) TERMINAL
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 100.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
TERMINAL LENGTH
(ABJT) 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY
(TTQY) 3 PIN
POWER RATING PER CHARACTERISTIC
(CTRD) 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR UNIVERSAL AND 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

Manufacturer Part Numbers

18840261

RNCC
5
RNVC
9
18840261

RNCC
3
RNVC
2
72053

RNCC
5
RNVC
9
72053

ISC
2
RNCC
C
RNVC
1

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