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NSN 5961-01-306-5472, 5961013065472
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013065472
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-306-5472

National Stock Number (NSN) 5961-01-306-5472, or NIIN 013065472, (transistor) was assigned August 25, 1989 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is fairly common among different weapons systems, belonging to 22 different platforms.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013065472 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
END ITEM IDENTIFICATION
(AGAV) 6625-01-255-4547 VOLTMETER
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL
(ABBH) PLASTIC
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-92
OVERALL HEIGHT
(ABKW) 0.670 INCHES MINIMUM
OVERALL LENGTH
(ABHP) 0.190 INCHES NOMINAL
OVERALL WIDTH
(ABMK) 0.145 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINIMUM
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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