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NSN 5961-01-306-8848, 5961013068848
SEMICONDUCTOR DEVICE,DIODE

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013068848
Codification Country
United States
Item Name Code
INC 20589
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-306-8848

National Stock Number (NSN) 5961-01-306-8848, or NIIN 013068848, (semiconductor device,diode) was assigned August 31, 1989 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of Sep 19, 2012. There has been one contract issued for this part number, with one award given. The US Government has only awarded those contracts to one supplier. The last contract numbers awarded were: SPM7M612M2589. The total value of the awarded contracts has been US$ 1,427.80.

This NSN is somewhat common among different platforms, belonging to 2 different weapons systems.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20589. [A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013068848 does not contain precious metals.

This NSN is associated to Schedule B 8541100070: diodes, other than photosensitve or led, with a maximum current of 0.5 a or less. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
INCLOSURE MATERIAL
(ABBH) GLASS
VOLTAGE TOLERANCE IN PERCENT
(CTQS) -5.0/+5.0
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED
(AFZC) GENERAL PURPOSE AND ZENER DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) DO-35
OVERALL DIAMETER
(ADAV) 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH
(ABHP) 4.25 MILLIMETERS MAXIMUM
MATERIAL
(MATT) GLASS INCLOSURE
MATERIAL
(MATT) SILICON SEMICONDUCTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 4.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT
(CTQS) -5.0 TO 5.0
TERMINAL CIRCLE DIAMETER
(AYQS) 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD
CURRENT RATING PER CHARACTERISTIC
(CTQX) 5.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC

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