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NSN 5961-01-326-7683, 5961013267683
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013267683
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-326-7683

National Stock Number (NSN) 5961-01-326-7683, or NIIN 013267683, (transistor) was assigned September 30, 1990 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is fairly common among different weapons systems, belonging to 21 different platforms.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013267683 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 8.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-204AA
OVERALL HEIGHT
(ABKW) 0.350 INCHES NOMINAL
OVERALL LENGTH
(ABHP) 1.563 INCHES MAXIMUM
OVERALL WIDTH
(ABMK) 1.050 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 2
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 175.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1500.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
TERMINAL TYPE AND QUANTITY
(TTQY) 2 PIN AND 1 CASE
POWER RATING PER CHARACTERISTIC
(CTRD) 175.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 8.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM

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