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NSN 5961-01-331-3186, 5961013313186
SEMICONDUCTOR DEVICE SET

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013313186
Codification Country
United States
Item Name Code
INC 20590
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-331-3186

National Stock Number (NSN) 5961-01-331-3186, or NIIN 013313186, (semiconductor device set) was assigned December 17, 1990 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 2 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20590. [A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES:ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013313186 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

COMPONENT FUNCTION RELATIONSHIP
(ASDD) MATCHED
COMPONENT NAME AND QUANTITY
(ASKA) 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-72 ALL TRANSISTOR
INTERNAL CONFIGURATION
(ALAS) FIELD EFFECT ALL TRANSISTOR
OVERALL DIAMETER
(ADAV) 0.208 INCHES MINIMUM AND 0.238 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH
(ABHP) 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS AMBIENT AIR ALL TRANSISTOR
MOUNTING METHOD
(AXGY) TERMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 10.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE AND 15.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER
(AYQS) 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY
(TTQY) 4 UNINSULATED WIRE LEAD ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS AMBIENT AIR ALL TRANSISTOR
INCLOSURE MATERIAL
(ABBH) METAL ALL TRANSISTOR
FIELD FORCE EFFECT TYPE
(BBJD) ELECTROSTATIC CHARGE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
CHANNEL POLARITY AND CONTROL TYPE (NON-CORE)
(ALAT) N-CHANNEL INSULATED GATE TYPE ALL TRANSISTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR

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