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NSN 5961-01-338-0675, 5961013380675
SEMICONDUCTOR DEVICE SET

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013380675
Codification Country
United States
Item Name Code
INC 20590
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-338-0675

National Stock Number (NSN) 5961-01-338-0675, or NIIN 013380675, (semiconductor device set) was assigned April 26, 1991 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 6 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 6 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of Mar 25, 2014. There have been 3 contracts issued for this part number, with 3 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 2 different suppliers. The last contract numbers awarded were: SPE7L114M0487, SPM7M613M2031, SPM7M613M1159. The total value of the awarded contracts has been US$ 5,685.92.

This NSN is very common among different weapons systems, belonging to 40 different platforms.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20590. [A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES:ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013380675 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
FIELD FORCE EFFECT TYPE
(BBJD) ELECTROSTATIC CHARGE
POWER RATING PER CHARACTERISTIC
(CTRD) 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE
MATERIAL
(MATT) GLASS INCLOSURE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL
(ABBH) GLASS ALL SEMICONDUCTOR DEVICE DIODE
END ITEM IDENTIFICATION
(AGAV) 5895-01-177-0791 RECEIVER-TRANSMITTER
COMPONENT FUNCTION RELATIONSHIP
(ASDD) MATCHED
COMPONENT NAME AND QUANTITY
(ASKA) 4 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED
(CBBL) BURN IN AND ELECTROSTATIC SENSITIVE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION
(ASCQ) PN ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER
(ADAV) 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH
(ABHP) 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
MATERIAL
(MATT) GLASS ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD
(AXGY) TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC
(CTRD) 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH
(ABJT) 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT
(TEST) 80063-A3006760 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE

Manufacturer Part Numbers

4E598

RNCC
5
RNVC
9
A2X2033

RNCC
5
RNVC
9
A30067601

RNCC
3
RNVC
2
DSB1037

RNCC
5
RNVC
2
JANTX1N5711

RNCC
5
RNVC
1
QSCH1459

RNCC
5
RNVC
9
QSCH1459

RNCC
5
RNVC
9
A2X2033

RNCC
C
RNVC
1

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