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NSN 5961-01-339-3273, 5961013393273
Cancelled -> Replaced by 5961014222336

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013393273
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-339-3273

National Stock Number (NSN) 5961-01-339-3273, or NIIN 013393273, (semiconductor device,thyristor) was assigned May 20, 1991 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN replaces 1 stock number, 5961014222336.

There are 4 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 5 suppliers. Today, 4 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 3 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 5 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013393273 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL AND PLASTIC
MATERIAL
(MATT) GLASS INCLOSURE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE AND UNABLE TO DECODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 100.00 AMPERES PEAK FORWARD SURGE CURRENT ABSOLUTE AND 7.50 AMPERES FORWARD CURRENT, TOTAL RMS UNIVERSAL AND 12.00 AMPERES FORWARD CURRENT, TOTAL RMS HORSEPOWER METRIC
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 7.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
END ITEM IDENTIFICATION
(AGAV) TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-220AB
MATERIAL
(MATT) GLASS ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT
(ABKW) 4.5 MILLIMETERS MAXIMUM
OVERALL LENGTH
(ABHP) 15.8 MILLIMETERS MAXIMUM
OVERALL WIDTH
(ABMK) 10.3 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL LENGTH
(ABJT) 13.5 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK

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