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NSN 5961-01-364-4452, 5961013644452
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013644452
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-364-4452

National Stock Number (NSN) 5961-01-364-4452, or NIIN 013644452, (transistor) was assigned September 19, 1992 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There is only one manufacturer part number associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, there are no suppliers listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is fairly common among different weapons systems, belonging to 22 different platforms.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013644452 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
UNABLE TO DECODE
(ALAT) UNABLE TO DECODE
CHANNEL POLARITY AND CONTROL TYPE (NON-CORE)
(ALAT) N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MILLIAMPERES ALL PRIMARIES MINOR AND 5.00 MILLIAMPERES MINIMUM OPERATING VOLTAGE MEGAWATTS AND 30.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MEGAWATTS
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS AMBIENT AIR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MILLIAMPERES NOMINAL GATE CURRENT AND 5.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION
(ALAS) FIELD EFFECT
OVERALL LENGTH
(ABHP) 9.5 MILLIMETERS MAXIMUM
OVERALL WIDTH
(ABMK) 6.4 MILLIMETERS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL HEIGHT
(ABKW) 8.8 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL LENGTH
(ABJT) 10.5 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) -40.0 NOMINAL GATE SUPPLY VOLTAGE AND 30.0 NOMINAL DRAIN TO GATE VOLTAGE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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