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NSN 5961-01-365-0681, 5961013650681
SEMICONDUCTOR DEVICE SET

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013650681
Codification Country
United States
Item Name Code
INC 20590
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-365-0681

National Stock Number (NSN) 5961-01-365-0681, or NIIN 013650681, (semiconductor device set) was assigned October 1, 1992 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is fairly common among different weapons systems, belonging to 22 different platforms.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20590. [A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES:ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013650681 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
INTERNAL JUNCTION CONFIGURATION
(ASCQ) PNPN
MATERIAL
(MATT) CERAMIC INCLOSURE ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK
INCLOSURE MATERIAL
(ABBH) CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
COMPONENT FUNCTION RELATIONSHIP
(ASDD) MATCHED
COMPONENT NAME AND QUANTITY
(ASKA) 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION
(ASCQ) PNPN ALL SEMICONDUCTOR DEVICE DIODE
MATERIAL
(MATT) CERAMIC ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 150.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD
(AXGY) TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL HEIGHT
(ABKW) 0.030 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH
(ABHP) 0.090 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC
(CTRD) 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH
(ABJT) 0.200 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL
(ABBH) CERAMIC

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