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NSN 5961-01-408-6784, 5961014086784
SEMICONDUCTOR DEVICE,DIODE

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 014086784
Codification Country
United States
Item Name Code
INC 20589
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-408-6784

National Stock Number (NSN) 5961-01-408-6784, or NIIN 014086784, (semiconductor device,diode) was assigned February 23, 1995 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is unique to one weapons system.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20589. [A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961014086784 does not contain precious metals.

This NSN is associated to Schedule B 8541100070: diodes, other than photosensitve or led, with a maximum current of 0.5 a or less. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

END ITEM IDENTIFICATION
(AGAV) 6625-01-363-6212
CAPACITANCE RATING IN PICOFARADS
(CTRG) 2.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC
(CTQX) 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
MATERIAL
(MATT) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 135.0 CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL HEIGHT
(ABKW) 0.165 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.210 INCHES MAXIMUM
OVERALL WIDTH
(ABMK) 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 1.9 MAXIMUM LIMITING VOLTAGE
INCLOSURE MATERIAL
(ABBH) PLASTIC
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MATERIAL
(MATT) PLASTIC INCLOSURE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET AND 50.00 MILLIAMPERES FORWARD CURRENT, AVERAGE OUTSIDE DIAMETER
POWER RATING PER CHARACTERISTIC
(CTRD) 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 135.0 DEG CELSIUS AMBIENT AIR
MATERIAL
(MATT) SILICON SEMICONDUCTOR

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