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NSN 5961-01-459-8552, 5961014598552
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 014598552
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-459-8552

National Stock Number (NSN) 5961-01-459-8552, or NIIN 014598552, (semiconductor device,thyristor) was assigned October 16, 1998 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There is only one manufacturer part number associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 2 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961014598552 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
MATERIAL
(MATT) PLASTIC INCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 20.00 AMPERES FORWARD CURRENT, TOTAL RMS HORSEPOWER METRIC AND 150.00 AMPERES FORWARD CURRENT, TOTAL RMS WATTS
POWER RATING PER CHARACTERISTIC
(CTRD) 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK AND 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR UNIVERSAL
INCLOSURE MATERIAL
(ABBH) PLASTIC
CURRENT RATING PER CHARACTERISTIC
(CTQX) 20.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 150.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
OVERALL HEIGHT
(ABKW) 0.195 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.700 INCHES MAXIMUM
OVERALL WIDTH
(ABMK) 0.408 INCHES MAXIMUM
MATERIAL
(MATT) PLASTIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 2
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC
(CTRD) 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL LENGTH
(ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 10.0 MAXIMUM PEAK GATE VOLTAGE

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