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NSN 5961-01-510-8470, 5961015108470
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 015108470
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-510-8470

National Stock Number (NSN) 5961-01-510-8470, or NIIN 015108470, (transistor) was assigned July 28, 2003 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There is only one manufacturer part number associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years, with the most recent procurement date of Apr 13, 2017. There have been 12 contracts issued for this part number, with 12 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 5 different suppliers. The last contract numbers awarded were: SPE7M517P7751, SPE7M517P7751, SPE7M516M8831, SPE7M516M8831, SPE7M516M8831. The total value of the awarded contracts has been US$ 103,022.17.

This NSN is unique to one weapons system.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Dec 13, 2008, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961015108470 does not contain precious metals.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 1800.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
INCLOSURE MATERIAL
(ABBH) METAL
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 5.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
PART NAME ASSIGNED BY CONTROLLING AGENCY
(CXCY) N-CHANNEL JFET
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 1800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) -40.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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